AON6424 30v n-channel mosfet v ds i d (at v gs =10v) 41a r ds(on) (at v gs =10v) < 8.5m w r ds(on) (at v gs = 4.5v) < 10m w symbol v ds the AON6424 uses advanced trench technology to provide excellent r ds(on) , low gate charge.this device is suitable for use as a high side switch in smps and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g d s top view 1 2 3 4 8 7 6 5 v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.5 60 5 p d w power dissipation a p dsm w t a =70c 25 1.3 t a =25c a t a =25c i dsm a t a =70c i d 41 26 t c =25c t c =100c mj avalanche current c 9 continuous drain current 32 11 a 36 v drain-source voltage 30 units junction and storage temperature range -55 to 150 c thermal characteristics v 12 gate-source voltage 90 pulsed drain current c maximum junction-to-ambient a c/w r q ja 21 50 25 continuous drain current parameter typ max t c =25c 2 10 t c =100c avalanche energy l=0.05mh c power dissipation b g d s top view 1 2 3 4 8 7 6 5 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.8 1.2 1.7 v i d(on) 90 a 6.8 8.5 t j =125c 11 13.5 7.7 10 m w g fs 100 s v sd 0.7 1 v i s 30 a c iss 1260 1580 1900 pf c oss 110 160 210 pf c rss 60 100 140 pf r g 0.7 1.4 2.1 w q g (10v) 20 26 32 nc q g (4.5v) 9 12 15 nc q gs 2 3 4 nc q gd 1.5 3 4.5 nc t d(on) 5 ns t 2 ns v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a v ds =v gs i d =250 m a i dss m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current m w v =10v, v =15v, r =0.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a forward transconductance i s =1a,v gs =0v r ds(on) static drain-source on-resistance v ds =5v, i d =20a v gs =4.5v, i d =20a diode forward voltage reverse transfer capacitance maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time gate source charge gate drain charge total gate charge t r 2 ns t d(off) 29 ns t f 3 ns t rr 8 10 12 ns q rr 12 16 20 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =20a, di/dt=500a/ m s body diode reverse recovery time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime turn-on rise time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6 AON6424 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2v 4v 6v 10v 2.5v 40 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 5 10 15 20 25 30 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2v 4v 6v 10v 2.5v www.freescale.net.cn 3/6 AON6424 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 600 1200 1800 2400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) c oss c rss v ds =12.5v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 40 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 600 1200 1800 2400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =12.5v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s r q jc =5 c/w www.freescale.net.cn 4/6 AON6424 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (not e c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c r q ja =60 c/w 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (not e c) t a =25 c t a =150 c t a =100 c t a =125 c www.freescale.net.cn 5/6 AON6424 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AON6424 30v n-channel mosfet
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